2SJ199

S MD Type MOS Fied Effect Transistor 2SJ199 SOT-23 MOSFET Unit: mm Directly driven by Ics having a 5V poer supply. +0.1 2.4-0.1 Has low on-state resistance RDS(on)=2.5 RDS(on)=2.0 MAX.@VGS=-4.0V,ID=-0.5A MAX.@VGS=-10V,ID=-0.5A +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -100 20 1.0 2.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-100V,VGS=0 VGS= 20V,VDS=0 -1.0 0.4 -2.1 0.9 1.5 1.1 220 VDS=-10V,VGS=0,f=1MHZ 85 8 45 VGS(on)=-10V,RG=10 0.5A RL=50 ,VDD=-25V,ID=36 360 90 2.5 2.0 pF pF pF ns ns ns ns Min Typ Max -10 10 -3.0 Unit A A V s VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,ID=-0.5A VGS=-4V,ID=-0.5A VGS=-10V,ID=-0.5A Marking Marking PC +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1