2SJ204

S MD Type MOS Fied Effect Transistor 2SJ204 SOT-23 MOSFET Unit: mm Features Directly driven by Ics having a 5V poer supply. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Has low on-state resistance RDS(on)=13 RDS(on)=8 MAX.@VGS=-4.0V,ID=-10mA MAX.@VGS=-10V,ID=-10mA +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -30 20 200 400 200 150 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-30V,VGS=0 VGS= 20V,VDS=0 A -1.4 20 8.5 5 27 VDS=-10V,VGS=0,f=1MHZ 27 6 120 VGS(on)=-4V,RG=10 RL=1.5 ,VDD=-5V,ID=-0.3A 240 135 210 13 8 pF pF pF ns ns ns ns -1.9 Min Typ Max -10 1.0 -2.4 Unit A A V ms VGS(off) VDS=-5.0V,ID=-1 Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-5.0V,ID=-10mA VGS=-4V,ID=-10mA VGS=-10V,ID=-10mA Marking Marking H15 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1