2SJ205

S MD Type MOS Fied Effect Transistor 2SJ205 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm Features +0.1 2.4-0.1 Directly driven by Ics having a 3V poer supply. Has low on-state resistance RDS(on)=5 RDS(on)=3 MAX.@VGS=-2.5V,ID=-10mA MAX.@VGS=-4V,ID=-300mA +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -16 16 500 1.0 2.0 150 -55 to +150 Unit V V mA A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-16V,VGS=0 VGS= 16V,VDS=0 A -1.4 0.4 -1.9 0.5 3.0 1.5 105 VDS=-3.0V,VGS=0,f=1MHZ 90 15 185 VGS(on)=-3V,RG=10 RL=10 ,VDD=-3V,ID=-0.3A 900 40 135 5.0 3.0 pF pF pF ns ns ns ns Min Typ Max -10 5 -2.4 Unit A A V s VGS(off) VDS=-5.0V,ID=-10 Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-3.0V,ID=-0.3A VGS=-2.5V,ID=-10mA VGS=-4V,ID=-0.3A Marking Marking PD +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1