2SJ207

S MD Type MOS Fied Effect Transistor 2SJ207 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 Has low on-state resistance RDS(on)=4 RDS(on)=1.5 MAX.@VGS=-2.5V,ID=-30mA MAX.@VGS=-4.0V,ID=-500mA +0.1 1.3-0.1 Directly driven by Ics having a 3V poer supply. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -16 16 1.0 2.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-16V,VGS=0 VGS= 16V,VDS=0 -1.4 0.4 -1.9 0.7 2.6 0.9 180 VDS=-3.0V,VGS=0,f=1MHZ 160 50 180 VGS(on)=-3V,RG=10 100mA RL=30 ,VDD=-3V,ID=500 130 240 4.0 1.5 pF pF pF ns ns ns ns Min Typ Max -10 5 -2.4 Unit A A V s VGS(off) VDS=-5.0V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-3.0V,ID=-500mA VGS=-2.5V,ID=-30mA VGS=-4V,ID=-500mA Marking Marking PE +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1