2SJ211

S MD Type MOS Fied Effect Transistor 2SJ211 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm Features +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the biasresistor. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -100 20 200 400 200 150 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-100V,VGS=0 VGS= 20V,VDS=0 A -1.4 20 -1.8 45 15 11 27 VDS=-5.0V,VGS=0,f=1MHZ 16 2 110 VGS(on)=-4V,RG=10 10mA RL=500 ,VDD=-5V,ID=150 160 150 30 20 pF pF pF ns ns ns ns Min Typ Max -10 10 -2.4 Unit A A V ms VGS(off) VDS=-5.0V,ID=-1 Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-5.0V,ID=-10mA VGS=-4.0V,ID=-10mA VGS=-10V,ID=-10mA Marking Marking H18 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1