2SJ319S

S MD SMD Type Silicon P-Channel MOSFET 2SJ319S TO-252 +0.15 1.50-0.15 IC MOSFET Features Low on-state resistance RDS(on)=2.3 (VGS=-10V,ID=-2A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 High speed switching 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%. Symbol VDSS VGSS ID ID PD Tch Tstg Rating -200 20 -3 -12 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Symbol VDSS VGSS IDSS IGSS Testconditons ID=-10mA,VGS=0 IG = 100 A,VDS=0 Min -200 20 -100 10 -2.0 1.0 1.7 1.7 330 VDS=-10V,VGS=0,f=1MHZ 130 25 10 VGS(on)=-10V,ID=--2A RL=15 30 40 30 IF=-3A,VGS=0 IF=-3A,VGS=0,dif/dt=50A/ s -1.15 180 2.3 pF pF pF ns ns ns ns V ns -4.0 Typ Max Unit V V A A V S VDS=-160V,VGS=0 VGS= 16V,VDS=0 VGS(off) VDS=-10V,ID=-1mA Yfs VDS=-10V,ID=-2A RDS(on) VGS=-10V,ID=-2A Ciss Coss Crss td(on) tr td(off) tf VDF trr 3.80 www.kexin.com.cn 1