2SJ356

S MD Type MOS Field Effect Transistors 2SJ356 SOT-89 MOSFET Unit: mm +0.1 1.50-0.1 Features Low on-state resistance RDS(on)=0.95 RDS(on)=0.50 (VGS=-4V,ID=-1.0A) +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 (VGS=-10V,ID=-1.0A) 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%. Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 -20,+10 2.0 4 2.0 150 -55 to +150 Unit V V A A W www.kexin.com.cn 1 SMD Type 2SJ356 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Reverse Recovery time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 16/+10V,VDS=0 -1.0 1.0 Min MOSFET Typ Max -10 10 Unit A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg QGS QGD trr Qrr IF=2.0A,VGS=0,di/dt=50A/ s VGS=-10V,ID=-2.0A,VDD=-48V,IG=-2mA VGS(on)=-10V,VDD=-25V,ID=--1A RL=255 ,RG=10 VDS=-10V,VGS=0,f=1MHZ VDS=-10V,ID=-1.0A VGS=-4V,ID=-1.0A VGS=-10V,ID=-1.0A -1.4 -2.0 0.65 0.41 270 145 55 4.3 21 115 75 11.6 1.0 3.8 82 94 0.95 0.50 pF pF pF ns ns ns ns nC nC nC ns nC 2 www.kexin.com.cn