2SJ387S

S MD Type SMDType Silicon P-Channel MOSFET 2SJ387S TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET Features Low on-resistance Low drive current +0.2 9.70-0.2 Unit: mm +0.1 0.80-0.1 +0.15 0.50-0.15 Suitable for Switching regulator, DC - DC converter 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%. Symbol VDSS VGSS ID ID PD Tch Tstg Rating -20 10 -10 -40 20 150 -55 to +150 Unit V V A A W 3.80 2.5 V Gate drive device can be driven from 3 V Source www.kexin.com.cn 1 SMD Type SMDType 2SJ387S Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Body to drain diode forward voltage Body to drain diode reverse recovery time Symbol VDSS VGSS IDSS IGSS Testconditons ID=-10mA,VGS=0 IG = 200 A ,VDS=0 Min -20 10 IC MOSFET Typ Max Unit V V VDS=-16V,VGS=0 VGS= 6.5V,VDS=0 -0.5 7 12 0.05 0.07 1170 VDS=-10V,VGS=0,f=1MHZ 860 310 20 VGS(on)=-4V,ID=--5A RL=2 325 350 425 6.5 VGS=-10V,ID=-1A,VDD=-48V 4.5 2.0 IF=-10A,VGS=0 IF=-10A,VGS=0,diF/dt=20A/ s -1.0 240 -100 10 -1.5 A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr VDS=-10V,ID=-5A VGS=-4V,ID=-5A VGS=-2.5V,ID=-5A 0.07 0.1 pF pF pF ns ns ns ns nC nC nC V ns 2 www.kexin.com.cn