2SJ529S

S MD SMD Type Hight Speed Power Switching 2SJ529S TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET Features Low on-resistance RDS(on) = 0.12 typ. Unit: mm High speed switching +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 4V gate drive devices. 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 20 -10 -40 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Testconditons ID=-10mA,VGS=0 IG = 100 A ,VDS=0 Min -60 20 -10 10 -1.0 4.5 7.5 0.12 0.17 580 VDS=-10V,VGS=0,f=1MHZ 300 85 10 VGS(on)=-10V,ID=--5A ,RL=6 40 85 60 0.16 0.24 pF pF pF ns ns ns ns -2.0 Typ Max Unit V V A A V S VDS=-60V,VGS=0 VGS= 16V,VDS=0 VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,ID=-5A VGS=-10V,ID=-5A VGS=-4.0V,ID=-5A 3.80 www.kexin.com.cn 1