2SJ607

S MD Type MOS Field Effect Transistor 2SJ607 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance RDS(on)1 =11 m RDS(on)2 = 16 m MAX. (VGS =-10 V, ID = -42A) Low Ciss: Ciss = 7500 pF TYP. Built-in gate protection diode +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 MAX. (VGS = -4.0 V, ID =-42 A) +0.2 8.7-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch Tstg Rating -60 20 83 332 160 1.5 150 -55 to +150 Unit V V A A W W 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SJ607 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 20V,VDS=0 -1.5 45 Min MOSFET Typ Max -10 10 Unit A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = -83A VDD= -48 V VGS =-10 V IF = 83A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A / s VGS(on)=-30V,ID=--42A ,VDD=-10V,RG=0 VDS=-10V,VGS=0,f=1MHZ VDS=-10V,ID=-42A VGS=-10V,ID=-42A VGS=-4.0V,ID=-42A -2.0 90 9.1 11 7500 1800 430 23 16 340 160 188 30 48 1.0 64 150 -2.5 11 16 m m pF pF pF ns ns ns ns nC nC nC V ns nC 2 www.kexin.com.cn