2SK1133

S MD Type MOS Field Effect Transistor 2SK1133 SOT-23 MOSFET Unit: mm Features Directly driven by Ics having a 5V power source. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 its high input impedance. 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Not necessary to consider driving current because of Possible to reduce the number of parts by omitting the biasresistor. 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 50% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 50 7.0 100 200 200 150 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=50V,VGS=0 VGS= 7V,VDS=0 A 1.0 20 1.7 40 16 7 VDS=5.0V,VGS=0,f=1MHZ 6 2 6 VGS(on)=0,VDD=5V,f=1MHz 25 36 35 50 pF pF pF ns ns ns ns Min Typ Max -10 10 2.0 Unit A A V ms VGS(off) VDS=5.0V,ID=1 Yfs VDS=5.0V,ID=20mA RDS(on) VGS=4V,ID=20mA Ciss Coss Crss td(on) tr td(off) tf Marking Marking G11 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1