2SK1399

S MD Type MOS Field Effect Transistor 2SK1399 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 Not necessary to consider driving current because of it is high input impedance Possible to reduce the number of parts by omitting the bias resistor +0.1 1.3-0.1 Can be driven by a 3.0-V power source 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 50 7.0 100 200 200 150 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=50V,VGS=0 VGS= 7.0V,VDS=0 0.9 20 1.2 38 22 14 8 VDS=3.0V,VGS=0,f=1MHZ 7 3 15 ID=20mA,VGS(on)=3V,RL=150 ,VDD=3.0V,RG=10 100 30 35 40 20 pF pF pF ns ns ns ns Min Typ Max 10 5.0 1.5 Unit A A V ms VGS(off) VDS=3.0V,ID=1 A Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=3.0V,ID=10mA VGS=2.5V,ID=10mA VGS=4.0V,ID=10mA Marking Marking G12 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1