2SK1483

S MD Type MOS Field Effect Transistor 2SK1483 SOT-89 +0.1 4.50-0.1 +0.1 1.80-0.1 MOSFET Unit: mm +0.1 1.50-0.1 Features +0.1 2.50-0.1 Can be driven directly an IC operating with a 5V single power supply. Low ON-state resistance RDS(on)=0.8 MAX. At VGS=4V,ID=0.5A RDS(on)=0.4 MAX. At VGS=10V,ID=0.5A 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 30 20 2.0 4.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=30V,VGS=0 VGS= 20V,VDS=0 0.9 20 1.2 38 22 14 8 VDS=10V,VGS=0,f=1MHZ 7 3 15 ID=0.5A,VGS(on)=10V,RL=50 ,VDD=25V,RG=10 50 420 240 40 20 pF pF pF ns ns ns ns Min Typ Max 10 5.0 1.5 Unit A A V ms VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=10V,ID=0.5A VGS=4.0V,ID=0.5A VGS=10V,ID=0.5A Marking Marking NB www.kexin.com.cn 1