2SK1581

S MD Type MOS Field Effect Transistor 2SK1581 SOT-23 MOSFET Unit: mm Can be driven by Ics having a 3V single power supply. +0.1 2.4-0.1 Not necessry to consider driving current because of its thgh input impedance. Possible to reduce the number of parts by omitting the bias resistor +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 16 16 200 400 200 150 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=16V,VGS=0 VGS= 3V,VDS=0 0.9 20 1.2 70 3.2 2.2 27 VDS=3.0V,VGS=0,f=1MHZ 37 8 100 ID=10mA,VGS(on)=3.0V,RL=300 ,VDD=3.0V,RG=10 300 210 240 5.0 3.0 pF pF pF ns ns ns ns Min Typ Max 10 10 1.5 Unit A A V ms VGS(off) VDS=3.0V,ID=10 A Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=3.0V,ID=10mA VGS=2.5V,ID=1mA VGS=4.0V,ID=1mA Marking Marking G14 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1