2SK1585

S MD Type MOS Field Effect Transistor 2SK1585 SOT-89 MOSFET Unit: mm +0.1 1.50-0.1 Features Directly driven by Ics having a 3V power supply. Has low on-state resistance RDS(on)=1.2 MAX.@VGS=2.5V,ID=0.5A +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 1 RDS(on)=1.0 MAX.@VGS=4.0V,ID=0.5A +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 16 16 1.0 2.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=16V,VGS=0 VGS= 16V,VDS=0 0.8 0.4 1.2 1.0 0.6 0.3 116 VDS=3.0V,VGS=0,f=1MHZ 107 27 80 ID=0.5A,VGS(on)=3V,RL=6 ,VDD=10V,RG=10 260 145 110 1.2 1.0 pF pF pF ns ns ns ns Min Typ Max 10 10 1.6 Unit A A V s VGS(off) VDS=5V,ID=1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=5.0V,ID=0.5A VGS=2.5V,ID=0.5A VGS=4.0V,ID=0.5A Marking Marking NE www.kexin.com.cn 1