2SK1589

S MD Type MOS Field Effect Transistor 2SK1589 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 Not necessary to consider driving current because of its high input impedance. +0.1 1.3-0.1 Directly driven by Ics having a 5V power supply. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 100 20 100 200 2.0 150 -55 to +150 Unit V V mA mA W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=100V,VGS=0 VGS= 20V,VDS=0 0.8 20 1.5 38 19 15 16 VDS=5.0V,VGS=0,f=1MHZ 12 3 17 ID=10mA,VGS(on)=5.0V,RL=500 ,VDD=5V,RG=10 10 68 38 30 25 pF pF pF ns ns ns ns Min Typ Max 10 1.0 1.8 Unit A A V ms VGS(off) VDS=5V,ID=1 A Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=5.0V,ID=10mA VGS=4.0V,ID=10mA VGS=10V,ID=10mA Marking Marking G17 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1