2SK1657

S MD Type MOS Field Effect Transistor 2SK1657 SOT-23 MOSFET Unit: mm Features Directly driven by Ics having a 3V power supply. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 IGSS= 5nA MAX.@VGS= 3.0V +0.1 1.3-0.1 Has low gate leakage current 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 30 7 100 200 200 150 -55 to +150 Unit V V mA mA mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=30V,VGS=0 VGS= 3.0V,VDS=0 0.9 20 1.2 40 25 18 15 VDS=3.0V,VGS=0,f=1MHZ 10 1.5 95 ID=10mA,VGS(on)=3V,RL=300 ,VDD=3.0V,RG=10 360 150 150 45 25 pF pF pF ns ns ns ns Min Typ Max 1.0 5.0 1.5 Unit A nA V ms VGS(off) VDS=3.0V,ID=1 A Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=3.0V,ID=10mA VGS=2.5V,ID=10mA VGS=4.0V,ID=10mA Marking Marking G19 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1