2SK1828

S MD Type MOS Field Effect Transistor 2SK1828 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm Features +0.1 2.4-0.1 Low Threshold Voltage :Vth=0.5 to 1.5V 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 2.5V Gate Drive High Speed 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID PD Tch Tstg Rating 20 10 50 200 150 -55 to +150 Unit V V mA mW Electrical Characteristics Ta = 25 Parameter Drain source breakdown voltage Drain cut-off current Gate leakage current Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time turn on time Switching time turn off time Symbol VDSS IDSS IGSS Yfs Testconditons ID=100 A,VGS=0 VDS=20V,VGS=0 VGS=10V,VDS=0 VDS=3.0V,ID=10mA 20 25 5.5 VDS=3.0V,VGS=0,f=1MHZ 1.6 6.5 ID=10mA,VGS(on)=0 to 2.5V,VDD=3.0V 0.14 0.14 40 pF pF pF s s Min 20 1.0 1 Typ Max Unit V A A ms RDS(on) VGS=2.5V,ID=10mA Ciss Coss Crss ton toff Marking Marking KI +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1