S MD SMD Type
MOS Field Effect Transistor 2SK2033
IC MOSFET
Features
High input impedance. Low gate threshold voltage :Vth=0.5 to 1.5V
+0.1 2.4-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Enhancement-Mode
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 1. Gate 2.Emitter 2. Source
+0.1 0.38-0.1
0-0.1
3. Drain 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID PD Tch Tstg Rating 20 10 100 200 150 -55 to +150 Unit V V mA mW
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-off delay time Symbol IDSS IGSS Vth Yfs Testconditons VDS=10V,VGS=0 VGS=20V,VDS=0 VDS=3V,ID=0.1mA VDS=3V,ID=10mA 0.5 25 50 8 8.5 VDS=3V,VGS=0,f=1MHZ 3.3 9.3 ID=10mA,VGS(on)=2.5V,VDD=3V 0.16 0.15 12 pF pF pF s s Min Typ Max 1 1 1.5 Unit A A V ms
RDS(on) VGS=2.5V,ID=10mA Ciss Coss Crss td(on) td(off)
Marking
Marking KP
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