2SK2084S

S MD SMD Type Silicon N-Channel MOSFET 2SK2084S IC MOSFET Features Low on-resistance High speed switching Low drive current +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID PD Tch Tstg Rating 20 20 7 20 150 -55 to +150 Unit V V A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=16V,VGS=0 VGS= 16V,VDS=0 1.0 5 9 0.04 0.053 Min Typ Max 100 10 2.5 Unit A A V S VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf ID=4A,VGS(on)=10V,RL=5 VDS=10V,VGS=0,f=1MHZ VDS=10V,ID=4A VGS=10V,ID=4A VGS=4V,ID=4A 0.058 0.075 800 680 165 15 60 100 80 pF pF pF ns ns ns ns 3.80 Suitable for Switching regulator, DC - DC converter www.kexin.com.cn 1