2SK2094

S MD SMD Type Silicon N-Channel MOSFET 2SK2094 IC MOSFET Features Low on-resistance Fast switching speed Low-voltage drive +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID Idp PD Tch Tstg Rating 60 20 2 8 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(th) Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf ID=1A,VGS(on)=10V,RL=30 ,RG=10 VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=1A VGS=10V,ID=1A VGS=4V,ID=1A 1.0 1.0 0.3 0.4 400 150 50 10 20 100 40 0.35 0.5 pF pF pF ns ns ns ns Min Typ Max 100 100 2.5 Unit A nA V S 3.80 Easily designed drive circuits www.kexin.com.cn 1