2SK2158

S MD Type MOS Field Effect Transistor 2SK2158 SOT-23 MOSFET Unit: mm Capable of drive gate with 1.5 V +0.1 2.4-0.1 Because of high input impedance, there is no need to consider driving current. Bias resistance can be omitted, enabling reduction in total number of parts. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 50 7.0 0.1 0.2 200 150 -55 to +150 Unit V V A A mW Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Symbol IDSS IGSS Testconditons VDS=50V,VGS=0 VGS= 7.0V,VDS=0 0.5 20 32 16 12 6 VDS=3V,VGS=0,f=1MHZ 8 1 9 ID=20mA,VGS(on)=3V,RL=150 ,RG=10 ,VDD=3V 48 21 31 50 20 15 pF pF pF ns ns ns ns 0.7 Min Typ Max 1.0 3.0 1.1 Unit A A V ms VGS(off) VDS=3V,ID=10 A Yfs VDS=3V,ID=10mA VGS=1.5V,ID=1.0mA Drain to source on-state resistance RDS(on) VGS=2.5V,ID=10mA VGS=4.0V,ID=1.0mA Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf Marking Marking G23 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1