2SK2159

S MD Type MOS Field Effect Transistor 2SK2159 SOT-89 4.50 +0.1 -0.1 MOSFET Unit: mm 1.50 +0.1 -0.1 Features Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 RDS(on) = 0.3 MAX. @VGS = 1.5 V, ID = 0.1 A MAX. @VGS = 4.0 V, ID = 1.0 A +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10ms,Duty Cycle 50% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 60 14 2.0 4.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Symbol IDSS IGSS Testconditons VDS=60V,VGS=0 VGS= 14V,VDS=0 0.5 0.4 0.55 0.27 0.22 319 VDS=10V,VGS=0,f=1MHZ 109 22 38 ID=1.0A,VGS(on)=3V,RL=25 ,RG=10 ,VDD=25V 128 237 130 0.7 0.5 0.3 pF pF pF ns ns ns ns 0.9 Min Typ Max 1.0 10 1.1 Unit A A V S VGS(off) VDS=10V,ID=1mA Yfs VDS=10V,ID=1.0A VGS=1.5V,ID=0.1A Drain to source on-state resistance RDS(on) VGS=2.5V,ID=1.0A VGS=4.0V,ID=1.0A Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf Marking Marking NW www.kexin.com.cn 1