2SK2211

S MD Type Silicon N-Channel MOSFET 2SK2211 SOT-89 4.50 +0.1 -0.1 MOSFET Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 Low ON-resistance RDS(ON) High-speed switching 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10ms,Duty Cycle 50% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 30 20 1.0 2.0 1 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Symbol VDSS VGSS IDSS IGSS Vth Yfs RDS(on) Ciss Coss Crss ton tr toff ID=0.5A,VGS(on)=10V,RL=10 ,VDD=10V VDS=10V,VGS=0,f=1MHZ Testconditons ID=0.1mA,VGS=0 IGS=0.1mA,VGS=0 VDS=25V,VGS=0 VGS= 15V,VDS=0 VDS=5V,ID=1mA VDS=10V,ID=0.5A VGS=4V,ID=0.5A VGS=10V,ID=0.5A 0.8 0.5 0.48 0.35 87 69 23 12 160 60 0.75 0.6 pF pF pF ns ns ns Min 30 20 1.0 10 2 Typ Max Unit V V A A V S Marking Marking 2M www.kexin.com.cn 1