2SK2329S

S MD SMD Type Silicon N-Channel MOSFET 2SK2329S IC MOSFET Features Low on-resistance High speed switching Low drive current +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 30 10 10 40 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Testconditons ID=10mA,VGS=0 IG= 200 A,VGS=0 VDS=25V,VGS=0 VGS= 6.5V,VDS=0 0.4 10 18 0.03 0.04 1250 VDS=10V,VGS=0,f=1MHZ 540 120 20 ID=5A,VGS(on)=4V,RL=2 145 225 125 0.04 0.06 pF pF pF ns ns ns ns Min 30 10 100 10 1.4 Typ Max Unit V V A A V S VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss ton tr toff tf VDS=10V,ID=5A VGS=4V,ID=5A VGS=2.5V,ID=5A 3.80 www.kexin.com.cn 1