S MD SMD Type
MOS Field Effect Transistor 2SK2414
IC MOSFET
Features
Low On-Resistance RDS(on)1 = 70 m RDS(on)2 = 95 m MAX. (@ VGS = 10 V, ID = 5.0 A) MAX. (@ VGS = 4 V, ID = 5.0 A)
+0.15 6.50-0.15 +0.2 5.30-0.2
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
+0.2 9.70-0.2
+0.1 0.80-0.1
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50-0.1
+0.25 2.65-0.1
High Avalanche Capability Ratings
+0.15 0.50-0.15
Built-in G-S Gate Protection Diodes
0.127 max
+0.15 5.55-0.15
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 60 20 10 ± 40 20 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 1.0 7.0 1.6 12 52 68 860 VDS=10V,VGS=0,f=1MHZ 440 110 15 ID=5A,VGS(on)=10V,RG=10 ,VDD=30V 90 75 35 70 95 Min Typ Max 10 10 2.0 Unit A A V S m m pF pF pF ns ns ns ns
VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss ton tr toff tf VDS=10V,ID=5A VGS=10V,ID=5A VGS=4V,ID=5A
3.80
Low Ciss Ciss = 840 pF TYP.
www.kexin.com.cn
1
很抱歉,暂时无法提供与“2SK2414”相匹配的价格&库存,您可以联系我们找货
免费人工找货