2SK2481

SMD S MD Type MOS Field Effect Transistors 2SK2481 TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low On-state Resistance:RDS(on)=4 max.(VGS=10V,ID=2.0A) Low Ciss Ciss=900pF TYP + .2 8 .7 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation Ta = 25 Total Power Dissipation TC = 25 Channel Temperature Storage temperature Single Avalanche Current *2 Single Avalanche Energy *2 *1. PW 10ìs,Dduty cycle 1%. 0 Tch Tstg IAS EAS Symbol VDSS VGSS ID(DS) ID(pulse) PT Rating 900 30 4 12 1.5 70 150 -55 to +150 4 65.9 A mJ Unit V V A A W *2.Starting Tch=25 ,RG=25Ù,VGS=20V 5 .6 0 1 Gate 2 Drain 3 Source High Avalanche Capability Ratings www.kexin.com.cn 1 SMD Type 2SK2481 Electrical Characteristics Ta = 25 Parameter Drain to Source On-state Resistance Gate Cut-off Voltage Forward Transfer Admittance Drain Cut-off Current Gate Leakage Current Input Capacitance Output Capacitance Feedback Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol Testconditons Transistors IC Min Typ 3.2 Max 4.0 3.5 Unit Ù V S RDS(on) VGS = 10 V, ID = 2.0 A VGS(off) VDS = 10 V, ID = 1 mA Yfs IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(S-D) trr Qrr VDS = 20 V, ID = 2.0 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 2.5 1.0 100 100 900 130 25 17 7 63 8 30 5 13 1.0 710 3.5 ìA nA pF pF pF ns ns ns ns VDS = 10 V VGS = 0 f = 1 MHz ID = 2.0 A VGS = 10 V VDD = 150 V RG = 10 Ù ID = 4.0 A VDD = 450 V VGS = 10 V IF = 4.0 A, VGS = 0 IF = 4.0 A, VGS = 0 di/dt = 50 A/ ìs nC V ns ìC 2 www.kexin.com.cn