2SK2731

S MD Type Silicon N-Channel MOSFET 2SK2731 SOT-23 MOSFET Unit: mm Features Low on-resistance. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Easy to parallel. 0.55 Easily designed drive circuits. +0.1 1.3-0.1 Fast switching speed. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 30 20 0.2 0.8 0.2 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS VGS(th) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=0.1A,VGS(on)=10V,RG=10 ,RL=150 ,VDD=15V VDS=10V,VGS=0,f=1MHZ Testconditons ID=1mA,VGS=0V VDS=30V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=0.1A VGS=10V,ID=0.1A VGS=4V,ID=0.1A 1.0 100 1.5 2.8 25 15 10 15 20 90 100 2.8 4.5 pF pF pF ns ns ns ns Min 30 10 10 2.5 Typ Max Unit V A A V ms Marking Marking KL +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1