2SK2857

S MD Type MOS Field Effect Transistor 2SK2857 SOT-89 MOSFET Unit: mm 1.50 +0.1 -0.1 Features Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m RDS(on)2 = 150 m MAX. (VGS = 4 V, ID = 1.5 A) MAX. (VGS = 10 V, ID = 2.5 A) 4.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 60 20 4 16 2 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 1.0 1 150 110 265 VDS=10V,VGS=0,f=1MHZ 125 56 8 ID=1A,VGS(on)=10V,RL=25 ,RG=10 ,VDD=25V 11 52 22 220 150 11.4 Min Typ Max 10 10 2.0 Unit A A V S m m pF pF pF ns ns ns ns VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss ton tr toff tf VDS=10V,ID=2A VGS=4V,ID=1.5A VGS=10V,ID=2.5A Marking Marking NX www.kexin.com.cn 1