2SK2859

S MD Type N-Channel Silicon MOSFET 2SK2859 MOSFET Features Low On resistance. Ultrahigh-speed switching. 4V drive. 1 : No Contact 2 : Source 3 : No Contact 4 : Gate 5-8 : Drain Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 100 15 2 8 1.6 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode forward voltage Symbol VDSS IDSS IGSS Testconditons ID=1mA,VGS=0 VDS=100V,VGS=0 VGS= 12V,VDS=0 1.0 2.5 4 0.3 0.4 380 VDS=20V,VGS=0,f=1MHZ 80 15 10 ID=2A,VGS(on)=10V,RL=25 ,VDD=50V 13 70 30 IS=2A,VGS=0 1 1.2 0.4 0.55 pF pF pF ns ns ns ns V Min 100 100 10 2.0 Typ Max Unit V A A V S VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss ton tr toff tf VSD VDS=10V,ID=2A VGS=10V,ID=2A VGS=4V,ID=2A www.kexin.com.cn 1