2SK2887

S MD SMD Type N-Channel Silicon MOSFET 2SK2887 IC MOSFET Features Low on-resistance. Fast switching speed. Wide SOA (safe operating area). +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.1 0.80-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Easy to parallel. 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 Easily designed drive circuits. 0.127 max +0.15 5.55-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 200 30 3 12 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Symbol VDSS IDSS IGSS VGS(th) Yfs RDS(on) Ciss Coss Crss ton tr toff tf trr IDR=3A,VGS=0V,di/dt=100A/ Qrr Testconditons ID=1mA,VGS=0 VDS=200V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=1.5A VGS=10V,ID=1.5A Min 200 Typ Max 3.80 Gate-source voltage (VGSS) guaranteed to be 30V. Unit V 100 100 2.0 0.6 1.5 0.7 230 0.9 4.0 A nA V S pF pF pF ns ns ns ns ns VDS=10V,VGS=0,f=1MHZ 100 35 10 ID=1.5A,VGS(on)=10V,RL=68 ,RG=10 ,VDD=100V 12 26 34 96 s 0.56 c 1 www.kexin.com.cn