2SK3018

S MD Type N-Channel MOSFET MOSFET 2SK3018 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Fast switching speed. ● Silicon N-channel MOSFET ● Drive circuits can be simple. Gate 0.55 ● Low on-resistance. Drain +0.1 1.3-0.1 ■ Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate ∗ Gate +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source Protection Diode 3. Drain 3.collector Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel to ambient Channel Temperature Storage temperature *1. Pw≤10ìs, duty cycle≤1%. *2. With each pin mounted on the recommended lands. Symbol VDSS VGSS ID IDP*1 PD *2 Rth(ch-a) * Tch Tstg 2 Rating 30 ±20 100 400 200 625 150 -55 to +150 Unit V V mA mW ℃/W ℃ ℃ www.kexin.com.cn 1 SMD Type 2SK3018 ■ Electrical Characteristics Ta = 25℃ Parameter Gate-source leakage Drain-source Breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off time Fall time Symbol IGSS Testconditons VGS =±20 V , VDS = 0 V 30 Min MOSFET Typ Max ±1 Unit ìA V V(BR)DSS ID= 10 ìA, VGS = 0V IDSS VGS(th) RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tr VDS = 30 V, VGS = 0V VDS = 3 V, ID= 100 ìA ID= 10 mA, VGS = 4V ID= 1mA, VGS = 2.5V VDS = 3 V, ID= 10 mA VDS = 5 V, VDS = 0 V, f= 1MHz ID= 10 mA, VDD= 5 V, VGS= 5 V, RL=500Ω RG= 10Ω 1 0.8 5 7 20 13 9 4 15 35 80 80 1.5 8 13 ìA V Ω mS pF pF pF ns ns ns ns 2 www.kexin.com.cn