2SK3024

S MD SMD Type Silicon N-Channel Power F-MOSFET 2SK3024 IC MOSFET Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High electrostatic breakdown voltage 2.3 +0.15 0.50-0.15 Low-voltage drive 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source +0.15 4.60-0.15 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 60 20 20 40 20 1 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS Vth Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=10A,VGS(on)=10V,RL=3 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons ID=1mA,VGS=0 VDS=50V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=10A VGS=10V,ID=10A VGS=4V,ID=10A 1 8 12 33 44 330 290 70 20 125 1480 520 50 70 Min 60 10 10 2.5 Typ Max Unit V A A V S m m pF pF pF ns ns ns ns 3.80 www.kexin.com.cn 1