2SK3111

S MD Type MOS Field Effect Transistor 2SK3111 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Gate voltage rating 30 V Low on-state resistance +0.2 8.7-0.2 Low input capacitance Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 RDS(on) = 180m MAX. (VGS = 10 V, ID = 10A) +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 200 30 20 60 62 1.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=10A,VGS(on)=10V,VDD=100V,RG=10 VDS=10V,VGS=0,f=1MHZ Testconditons VDS=200V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=10A VGS=10V,ID=10A 2.5 3.0 120 1000 300 150 25 90 80 40 180 Min Typ Max 100 10 4.5 Unit A A V S m pF pF pF ns ns ns ns 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1