2SK3116

S MD Type MOS Field Effect Transistor 2SK3116 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.75 A) +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Avalanche capability ratings 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 Gate voltage rating 30 V +0.2 8.7-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 600 30 7.5 30 1.5 70 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=3.75A,VGS(on)=10V,VDD=150V,RG=1 0 ,RL=50 VDS=10V,VGS=0,f=1MHZ Testconditons VDS=600V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=3.75A VGS=10V,ID=3.75A 2.5 2.0 0.9 1100 200 20 18 15 50 15 1.2 pF pF pF ns ns ns ns Min Typ Max 100 100 3.5 Unit A A V S 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1