2SK3147S

S MD SMD Type Silicon N Cannel MOSFET 2SK3147S IC MOSFET Features Low on-resistance RDS = 0.1 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching +0.2 9.70-0.2 +0.15 0.50-0.15 +0.1 0.80-0.1 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 4 V gate drive device can be driven from 5 V source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 100 20 5 20 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=3A,VGS(on)=10V,RL=10 VDS=10V,VGS=0,f=1MHZ Testconditons VDS=100V,VGS=0 VGS= 16V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=3A VGS=10V,ID=3A VGS=4V,ID=3A 1..0 3.5 6 0.1 0.13 420 185 100 10 35 110 60 0.13 0.18 pF pF pF ns ns ns ns Min Typ Max 10 10 2.5 Unit A A V S 3.80 www.kexin.com.cn 1