SMD S MD Type
MOS Field Effect Transistor 2SK3325
TO-263
+ .1 1 .2 7 -00.1
Transistors IC
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
+ .2 8 .7 -00.2
Gate voltage rating:
30 V
Low on-state resistance RDS(on) = 0.85 Ù MAX. (VGS = 10 V, ID = 5.0 A)
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
2.54
+0.2 -0.2 +0.1 5.08-0.1
+ .2 2 .5 4 -00.2
Avalanche capability ratings
+ .2 5 .2 8 -00.2
+ .2 1 5 .2 5 -00.2
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) *1 Total Power Dissipation (TA = 25 ) Total Power Dissipation (TC = 25 ) Channel Temperature Storage temperature Single Avalanche Current *2 Single Avalanche Energy *2 *1. PW 10ìs,Dduty cycle 1%. 0V Tch Tstg IAS EAS Symbol VDSS VGSS ID(DS) ID(pulse) PT Rating 500 30 10 40 1.5 85 150 -55 to +150 10 10.7 A mJ Unit V V A A W
*2. Starting Tch = 25 , VDD = 150 V, RG = 25 Ù, VGS = 20 V
5 .6 0
1 Gate 2 Drain 3 Source
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1
SMD Type
2SK3325
Electrical Characteristics Ta = 25
Parameter Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Feedback Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS = 500 V, VGS = 0 V VGS = 30 V, VDS = 0 V
Transistors IC
Min
Typ
Max 100 100
Unit ìA nA V S
VGS(off) VDS = 10 V, ID = 1 mA Yfs VDS = 10 V, ID = 5.0 A
2.5 2.0 4.0 0.68 1200
3.5
RDS(on) VGS = 10 V, ID = 5.0 A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(S-D) trr Qrr IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V, di/dt = 50 A / ìs VDD = 400 V, VGS = 10 V, ID = 10 A VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V,RG = 10 Ù, RL = 60 Ù VDS = 10 V, VGS = 0 V, f = 1 MHz
0.85
Ù pF pF pF ns ns ns ns nC nC nC V ìs ìC
190 10 21 11 40 9.5 22 6.5 7.5 1.0 0.5 2.6
2
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