2SK3353

S MD Type MOS Field Effect Transistor 2SK3353 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 9.5 m RDS(on)2 = 14 m MAX. (VGS = 10 V, ID = 41 A) Low Ciss: Ciss = 4650 pF TYP. +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 Built-in gate protection diode +0.2 15.25-0.2 MAX. (VGS = 4 V, ID = 41 A) +0.2 8.7-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS(AC) ID Idp * PD Rating 60 20 82 328 1.5 95 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 42V, VGS = 10 V, ID = 82A ID=41A,VGS(on)=10V,RG=10 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=41A VGS=10V,ID=41A VGS=4V,ID=41A 2.5 30 50 7.5 10.5 4650 780 380 100 1550 280 420 90 14 38 9.5 14 Min Typ Max 100 10 3.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1