2SK3432

S MD Type MOS Field Effect Transistor 2SK3432 Features Super low on-state resistance: RDS(on)1 = 4.0m RDS(on)2 = 6.9 m MAX. (VGS = 10 V, ID = 42 A) MAX. (VGS = 4 V, ID = 42 A) +0.2 8.7-0.2 +0.1 1.27-0.1 MOSFET TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Built-in gate protection diode +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 Low Ciss: Ciss = 9500 pF TYP. +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 40 20 83 332 100 1.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =83A, VDD =32V, VGS = 10 V ID=42A,VGS(on)=10V,RG=10 ,VDD=20V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=40V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=42A VGS=10V,ID=42A VGS=4V,ID=42A 1.5 40 2.0 80 3.2 4.8 9500 2200 920 140 1800 470 410 150 29 45 4.0 6.9 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1