2SK3482

S MD SMD Type MOS Field Effect Transistor 2SK3482 TO-252 IC MOSFET Features Super low on-state resistance: RDS(on)1 = 33m RDS(on)2 = 39 m MAX. (VGS = 10 V, ID = 18A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 +0.15 0.50-0.15 Low Ciss: Ciss = 3600 pF TYP. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 100 20 36 100 50 1.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =36A, VDD =80V, VGS = 10 V ID=18A,VGS(on)=10V,RG=0 ,VDD=50V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=100V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=18A VGS=10V,ID=18A VGS=4.5V,ID=18A 1.5 12 2.0 23 27 29 3600 360 190 15 10 68 6 72 10 19 33 39 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 3.80 MAX. (VGS = 4.5 V, ID = 18A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 www.kexin.com.cn 1