2SK3483

S MD SMD Type MOS Field Effect Transistor 2SK3483 TO-252 +0.15 1.50-0.15 IC MOSFET Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Super low on-state resistance: RDS(on)1 = 52m RDS(on)2 = 59m MAX. (VGS = 10 V, ID = 14A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 MAX. (VGS = 4.5 V, ID = 14A) Low Ciss: Ciss = 2300 pF TYP. +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 100 20 28 60 40 1.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =28A, VDD =80V, VGS = 10 V ID=14A,VGS(on)=10V,RG=0 ,VDD=50V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=100V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=14A VGS=10V,ID=14A VGS=4.5V,ID=14A 1.5 9.0 2.0 18 41 45 2300 230 120 12 9 53 5 49 7 13 52 59 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 3.80 www.kexin.com.cn 1