2SK3507

S MD SMD Type MOS Field Effect Transistor 2SK3507 TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 IC MOSFET Features 4.5 V drive available Low on-state resistance RDS(on)1 = 45 m Low gate charge QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) Built-in G-S protection diode Surface mount package available 2.3 +0.15 4.60-0.15 Unit: mm MAX. (VGS = 10 V, ID = 11 A) +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 30 16 22 45 20 1.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =22A, VDD =24V, VGS = 10 V ID=11A,VGS(on)=10V,RL=10 ,VDD=15V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=30V,VGS=0 VGS= 16V,VDS=0 VDS=10V,ID=1mA VDS=4.0V,ID=11A VGS=10V,ID=11A VGS=4.5V,ID=11A 1.5 6 28 46 360 125 65 6.6 3.6 16 5.3 8.5 2 2.1 45 76 Min Typ Max 10 1 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 3.80 www.kexin.com.cn 1