2SK3510

S MD Type MOS Field Effect Transistor 2SK3510 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on) = 8.5 m MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 Low Ciss: Ciss = 8500 pF TYP. +0.2 8.7-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 75 20 83 332 125 1.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf QG QGS QGD ID =83A, VDD =60V, VGS = 10 V ID=42A,VGS(on)=10V,RL=10 ,VDD=38V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=70V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=42A VGS=10V,ID=42A 2.0 30 3.0 60 6.5 8500 1300 650 35 28 105 16 150 30 52 8.5 Min Typ Max 10 1 4.0 Unit A A V S m pF pF pF ns ns ns ns nC nC nC 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1