2SK3511

S MD Type MOSFET MOS Field Effect Transistor 2SK3511 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 Low Ciss: Ciss = 5900 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 75 20 83 260 100 1.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf QG QGS QGD ID =83A, VDD =60V, VGS = 10 V ID=42A,VGS(on)=10V,RL=10 ,VDD=38V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=75V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=42A VGS=10V,ID=42A 2.0 21 3.0 45 9.5 5900 810 400 30 21 72 12 100 24 35 12.5 Min Typ Max 10 10 4.0 Unit A A V S m pF pF pF ns ns ns ns nC nC nC 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1