2SK3575

S MD Type MOSFET MOS Field Effect Transistor 2SK3575 TO-263 Features +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 4.5V drive available. Low on-state resistance, +0.2 8.7-0.2 Low gate charge QG = 70nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A) Built-in gate protection diode Surface mount device available +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 30 20 83 332 105 1.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 24V VGS = 10 V ID = 83A ID=42A,VGS(on)=10V,RG=10 ,VDD=15V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=30V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=42A VGS=10V,ID=42A VGS=4.5V,ID=42A 1.5 27 3.3 4.3 3700 1430 500 26 27 110 40 70 12 20 4.5 6.4 Min Typ Max 10 100 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 5.60 1 Gate 2 Drain 3 Source RDS(on)1 = 4.5m MAX. (VGS = 10 V, ID = 42A) www.kexin.com.cn 1