2SK3637

SMD S MD Type Silicon N-channel Power MOSFET 2SK3637 TO-263 Features Low on-resistance, low Qg High avalanche resistance + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 200 30 50 200 2 000 3 100 150 -55 to +150 Unit V V A A mJ W 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SK3637 Electrical Characteristics Ta = 25 Parameter Gate-drain surrender voltage Diode forward voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance Short-circuit output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Total gate charge Gate-source charge Gate-drain charge Channel-case heat resistance Channel-atmosphere heat resistance Symbol VDSS VDSF Vth IDSS IGSS Testconditons ID = 1 mA, VGS = 0 IDR = 50 A, VGS = 0 VDS = 25 V, ID = 10 mA VDS = 160 V, VGS = 0 VGS = 30 V, VDS = 0 Transistors IC Min 200 Typ Max Unit V -1.5 2 4 100 1 29 15 30 4 550 40 V V ìA ìA mÙ S pF pF pF ns ns ns ns ns nC nC nC nC RDS(on) VGS = 10 V, ID = 25 A Yfs Ciss Coss Crss td(on) tr td(off) tf trr Qrr Qg Qgs Qgd Rth(ch-c) Rth(ch-a) VDD = 100 V, ID = 25 A,VGS = 10 V L = 230 ìH, VDD = 100 V IDR = 25 A, di /dt = 100 A/ ìs VDD = 100 V, ID = 25 A,RL = 4 Ù, VGS = 10 V VDS = 25 V, VGS = 0, f = 1 MHz VDS = 25 V, ID = 25 A 750 75 50 125 390 140 210 820 85 30 12 1.25 41.6 /W /W 2 www.kexin.com.cn