2SK3638

S MD SMD Type IC MOSFET MOS Field Effect Transistor 2SK3638 TO-252 +0.15 1.50-0.15 Features Low on-state resistance RDS(on)1 = 8.5 m RDS(on)2 = 15 m MAX. (VGS = 10 V, ID = 32 A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Low Ciss: Ciss = 1100 pF TYP. Built-in gate protection diode +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 MAX. (VGS = 4.5 V, ID = 18 A) 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 20 20 64 220 36 1.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 16V VGS = 10 V ID =64A ID=32A,VGS(on)=10V,RG=0 ,VDD=10V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=20V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=32A VGS=10V,ID=32A VGS=4.5V,ID=18A 1.5 12 25 6.8 10 1100 450 170 10 4.3 35 9.7 22 4.3 5.1 8.5 15 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 3.80 www.kexin.com.cn 1