2SK3668

S MD Type MOSFET MOS Field Effect Transistor 2SK3668 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) +0.2 8.7-0.2 Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 Surface mount package available 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 400 30 10 34 1.5 100 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 Ciss Coss Crss ton tr toff tf QG QGS QGD VF(S-D) trr Qrr VDD = 320V VGS = 10 V ID =10A IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V di/dt = 100 A/ ìs ID=5.0A,VGS(on)=10V,RG=10 ,VDD=150V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=400V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=5.0A VGS=10V,ID=5.0A 2.5 3.0 5.6 0.4 1320 230 13 18 8 44 4 26 7 11 0.9 350 2.7 0.55 pF pF pF ns ns ns ns nC nC nC V ns ìC Min Typ Max 10 100 3.5 Unit A nA V S 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1