MOSFET
SMD Type
P-Channel MOSFET
AO4407
SOP-8
■ Features
● VDS (V) =-30V
● ID =-12 A (VGS =-20V)
1.50 0.15
0.21 -0.02
● RDS(ON) < 14mΩ (VGS =-10V)
+0.04
● RDS(ON) < 13mΩ (VGS =-20V)
D
● RDS(ON) < 30mΩ (VGS =-5V)
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±25
Continuous Drain Current
TA=25°C
TA=70°C
Pulsed Drain Current
IDM
Avalanche Current
Power Dissipation
Avalanche energy
Thermal Resistance.Junction- to-Ambient
ID
IAS,IAR
TA=25°C
TA=70°C
L=0.3mH
t ≤ 10s
Steady-State
PD
EAS,EAR
RthJA
-10
-60
A
26
3.1
W
2
101
mJ
40
75
RthJC
24
TJ
150
Junction Storage Temperature Range
Tstg
-55 to 150
Steady-State
V
-12
Junction Temperature
Thermal Resistance.Junction- to-Case
Unit
℃/W
℃
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1
MOSFET
SMD Type
P-Channel MOSFET
AO4407
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
VDS=0V, VGS=±25V
VGS(th)
VDS=VGS ID=-250μA
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(On)
Min
Typ
-30
ID=-250μA, VGS=0V
VDS=-30V, VGS=0V
-1
VDS=-30V, VGS=0V, TJ=55℃
-5
-1.7
Forward Transconductance
VDS=-5V, ID=-10.5A
Ciss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
19
A
27
2060
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-12A
2.4
3.6
24
30
36
11
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Body Diode Reverse Recovery Charge
Qrr
Maximum Body-Diode Continuous Current
IS
VSD
■ Marking
Marking
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4407
KC****
VGS=-10V, VDS=-15V, RL=1.25Ω,RG=3Ω
Ω
nC
4.6
10
trr
pF
1.2
Qgd
Body Diode Reverse Recovery Time
2600
295
td(on)
tf
S
370
Gate Drain Charge
Turn-Off Fall Time
mΩ
30
-60
Turn-On DelayTime
Diode Forward Voltage
2
gFS
Coss
V
14
VGS=-10V, VDS=-5V
Output Capacitance
-2.8
13
ID(ON)
Input Capacitance
nA
VGS=-10V, ID=-12A
TJ=125℃
μA
±100
VGS=-20V, ID=-12A
VGS=-10V, ID=-12A
Unit
V
VGS=-5V, ID=-7A
On state drain current
Max
9.4
ns
24
12
IF=-12A, dI/dt=100A/μs
IS=-1A,VGS=0V
30
40
22
nC
-4
A
-1
V
MOSFET
SMD Type
P-Channel MOSFET
AO4407
■ Typical Characterisitics
80
80
-10V
-6V
VDS=-5V
-5V
60
-4.5V
40
-ID(A)
-ID (A)
60
VGS=-3.5V
1
2
3
4
1
5
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.6
25
RDS(ON) (mΩ
Ω)
25°C
0
0
0
125°C
20
-4V
20
40
VGS=-5V
20
15
10
VGS=-10V
5
0
VGS=-10V
ID=-12A
1.4
1.2
1
VGS=-5V
ID=-7A
0.8
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
30
1.0E+01
ID=-12A
1.0E+00
40
1.0E-01
20
125°C
15
IS (A)
RDS(ON) (mΩ
Ω)
25
125°C
1.0E-02
25°C
1.0E-03
25°C
10
1.0E-04
1.0E-05
5
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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MOSFET
SMD Type
P-Channel MOSFET
AO4407
■ Typical Characterisitics
10
3000
VDS=-15V
ID=-12A
2500
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
2000
1500
1000
Coss
500
0
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
1000.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
TA=25°C
10.0
10µs
100µs
RDS(ON)
limited
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
1000
Power (W)
ID (Amps)
100.0
10
10s
DC
1
0.0
0.01
0.1
1
VDS (Volts)
10
100
0.00001
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
.
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
4
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100
1000
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