0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
AO4407

AO4407

  • 厂商:

    KEXIN(科信)

  • 封装:

    SOP8

  • 描述:

    AO4407

  • 数据手册
  • 价格&库存
AO4407 数据手册
MOSFET SMD Type P-Channel MOSFET AO4407 SOP-8 ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) 1.50 0.15 0.21 -0.02 ● RDS(ON) < 14mΩ (VGS =-10V) +0.04 ● RDS(ON) < 13mΩ (VGS =-20V) D ● RDS(ON) < 30mΩ (VGS =-5V) 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current IDM Avalanche Current Power Dissipation Avalanche energy Thermal Resistance.Junction- to-Ambient ID IAS,IAR TA=25°C TA=70°C L=0.3mH t ≤ 10s Steady-State PD EAS,EAR RthJA -10 -60 A 26 3.1 W 2 101 mJ 40 75 RthJC 24 TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Steady-State V -12 Junction Temperature Thermal Resistance.Junction- to-Case Unit ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4407 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS VDS=0V, VGS=±25V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage Static Drain-Source On-Resistance RDS(On) Min Typ -30 ID=-250μA, VGS=0V VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 -1.7 Forward Transconductance VDS=-5V, ID=-10.5A Ciss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs 19 A 27 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-12A 2.4 3.6 24 30 36 11 Turn-On Rise Time tr Turn-Off DelayTime td(off) Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS VSD ■ Marking Marking www.kexin.com.cn 4407 KC**** VGS=-10V, VDS=-15V, RL=1.25Ω,RG=3Ω Ω nC 4.6 10 trr pF 1.2 Qgd Body Diode Reverse Recovery Time 2600 295 td(on) tf S 370 Gate Drain Charge Turn-Off Fall Time mΩ 30 -60 Turn-On DelayTime Diode Forward Voltage 2 gFS Coss V 14 VGS=-10V, VDS=-5V Output Capacitance -2.8 13 ID(ON) Input Capacitance nA VGS=-10V, ID=-12A TJ=125℃ μA ±100 VGS=-20V, ID=-12A VGS=-10V, ID=-12A Unit V VGS=-5V, ID=-7A On state drain current Max 9.4 ns 24 12 IF=-12A, dI/dt=100A/μs IS=-1A,VGS=0V 30 40 22 nC -4 A -1 V MOSFET SMD Type P-Channel MOSFET AO4407 ■ Typical Characterisitics 80 80 -10V -6V VDS=-5V -5V 60 -4.5V 40 -ID(A) -ID (A) 60 VGS=-3.5V 1 2 3 4 1 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 25°C 0 0 0 125°C 20 -4V 20 40 VGS=-5V 20 15 10 VGS=-10V 5 0 VGS=-10V ID=-12A 1.4 1.2 1 VGS=-5V ID=-7A 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 30 1.0E+01 ID=-12A 1.0E+00 40 1.0E-01 20 125°C 15 IS (A) RDS(ON) (mΩ Ω) 25 125°C 1.0E-02 25°C 1.0E-03 25°C 10 1.0E-04 1.0E-05 5 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4407 ■ Typical Characterisitics 10 3000 VDS=-15V ID=-12A 2500 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 2000 1500 1000 Coss 500 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 1000.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 10.0 10µs 100µs RDS(ON) limited 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 1000 Power (W) ID (Amps) 100.0 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) . Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000
AO4407 价格&库存

很抱歉,暂时无法提供与“AO4407”相匹配的价格&库存,您可以联系我们找货

免费人工找货
AO4407
    •  国内价格
    • 5+0.90504
    • 50+0.72144
    • 150+0.64271
    • 500+0.54443
    • 2500+0.50069
    • 5000+0.47445

    库存:2358