AO6601

MOSFET SMD Type Complementary Trench MOSFET AO6601 (KO6601) 8QLW PP ( SOT-23-6 ) +0.1 0.4 -0.1 6 5 4 1 2 3  1.6  ƽ VDS (V) = 30V  2.8  N-Channel :  Ƶ Features ƽ RDS(ON) ˘ 60m¡ (VGS = 10V)  ƽ ID = 3.4 A (VGS = 10V) ƽ RDS(ON) ˘ 70m¡ (VGS = 4.5V)    +0.01 -0.01 ƽ RDS(ON) ˘ 90m¡ (VGS = 2.5V) +0.2 -0.1    P-Channel : ƽ VDS (V) = -30V ƽ ID = -2.3 A (VGS = 10V)  ƽ RDS(ON) ˘ 150m¡ (VGS = -4.5V) 1 G1 2 S2 3 G2    ƽ RDS(ON) ˘ 115m¡ (VGS = -10V) 4 D2 5 S1 6 D1 ƽ RDS(ON) ˘ 200m¡ (VGS = -2.5V) D1 G1 D2 G2 S1 N-channel S2 P-channel Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS Continuous Drain Current TA=25ć ID TA=70ć Pulsed Drain Current Power Dissipation IDM TA=25ć PD TA=70ć Thermal Resistance.Junction- to-Ambient t İ 10s RthJA Steady-State Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range f12 3.4 -2.3 2.7 -1.8 20 Unit V A -15 1.15 W 0.73 110 ć/W 150 RthJL 80 TJ 150 Tstg -55 to 150 ć www.kexin.com.cn 1 MOSFET SMD Type Complementary Trench MOSFET AO6601 (KO6601) Ƶ N-Channel Mosfet Electrical Characteristics Ta = 25ć Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Gate Threshold Voltage Test Conditions Min Typ 30 ID=250­A, VGS=0V VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55ć 5 IGSS VDS=0V, VGS=f12V VGS(th) VDS=VGS , ID=250uA RDS(On) 0.5 VDS=5V, ID=3.4A Input Capacitance Ciss Coss Crss Gate Resistance Rg Total Gate Charge (10V) 60 88 TJ=125ć m¡ 20 A 14  VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Qg Total Gate Charge (4.5V) V 90 VGS=10V, VDS=5V Output Capacitance 1.5 VGS=2.5V, ID=2A gFS Reverse Transfer Capacitance nA 70 ID(ON) uA f100 VGS=4.5V, ID=3A Forward Transconductance On State Drain Current VGS=10V, VDS=15V, ID=3.4A S 182 285 25 45 10 25 0.9 2.7 10 12 4.7 6 pF ¡ nC Qgs 0.95 Gate Drain Charge Qgd 1.6 Turn-On DelayTime td(on) 3.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) 17.5 Turn-Off Fall Time tf 2.5 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr 4 nC Maximum Body-Diode Continuous Current IS 1.5 A 1 V Gate Source Charge Diode Forward Voltage 2 VGS=10V, ID=3.4A Unit V VGS=10V, ID=3.4A Static Drain-Source On-Resistance Max www.kexin.com.cn VSD VGS=10V, VDS=15V, RL=4.4¡,RG=3¡ IF= 3.4A, dI/dt= 100A/­s IS=1A,VGS=0V 1.5 ns 12 MOSFET SMD Type Complementary Trench MOSFET AO6601 (KO6601) Ƶ P-Channel Mosfet Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Test Conditions Min Typ -30 ID=-250­A, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55ć -5 VDS=0V, VGS=f12V -0.6 VDS=VGS , ID=-250­A On state drain current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) VGS=-10V, ID=-2.3A VGS=-2.5V, ID=-1A 200 VGS=-10V, VDS=-5V -15 VDS=-5V, ID=-2.3A VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 315 25 50 10 30 4 12 4.5 7 2 4 Qgd 1 Turn-On DelayTime td(on) 6 Turn-On Rise Time tr Turn-Off DelayTime td(off) 20 tf 5 trr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD IF=-2.3A, dI/dt=100A/­s IS=-1A,VGS=0V S 205 Gate Drain Charge VGS=-10V, VDS=-15V, RL=6¡,RG=3¡ m¡ A 8 0.7 Qrr V 150 Qgs Body Diode Reverse Recovery Time nA -1.4 200 TJ=125ć VGS=-10V, VDS=-15V, ID=-2.3A Body Diode Reverse Recovery Charge f100 VGS=-4.5V, ID=-2A Gate Source Charge Turn-Off Fall Time uA 115 Qg Total Gate Charge (4.5V) Unit V VDS=-30V, VGS=0V VGS=-10V, ID=-2.3A Static Drain-Source On-Resistance Max pF ¡ nC 3.5 ns 15 6 nC -1.5 A -1 V Ƶ Marking Marking F1 www.kexin.com.cn 3 MOSFET SMD Type Complementary Trench MOSFET AO6601 (KO6601) Ƶ N-Channel Mosfet Typical Characterisitics 15 15 10V VDS=5V 2.5V 3V 12 12 4.5V 9 ID(A) ID (A) 9 6 6 VGS=2V 125eC 3 3 0 0 0 1 2 3 4 0 5 VDS (Volts) Fig 1: On-Region Characteristics 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer  Characteristics 80 Normalized On-Resistance 2 VGS=2.5V 70 :) RDS(ON) (m: 25eC 60 VGS=4.5V 50 40 VGS=10V 30 1.8 VGS=4.5V ID=3A 1.6 1.4 VGS=2.5V 5 ID=2A 2 1.2 VGS=10V ID=3.4A 1 0.8 0 2 4 6 8 10 . ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 140 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 ID=3.4A 1.0E+01 120 1.0E+00 125eC IS (A) :) RDS(ON) (m: 100 80 125eC 1.0E-02 60 25eC 25eC 1.0E-03 40 1.0E-04 20 1.0E-05 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 1.0E-01 2 www.kexin.com.cn 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 MOSFET SMD Type Complementary Trench MOSFET AO6601 (KO6601) Ƶ N-Channel Mosfet Typical Characterisitics 10 500 VDS=15V ID=3.4A 400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 300 200 Coss 2 100 0 0 Crss 0 3 6 9 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25eC RDS(ON) limited 10Ps 100Ps 1.0 10ms 1ms TJ(Max)=150eC TA=25eC 0.1 DC 100 Power (W) ID (Amps) 10.0 10 10s 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctiont A bi t (Note to-Ambient (N t F) ZT JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZTJA.RTJA 1 RTJA=150eC/W 0.1 Single Pulse 0.01 PD Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.kexin.com.cn 5 MOSFET SMD Type Complementary Trench MOSFET AO6601 (KO6601) Ƶ P-Channel Mosfet Typical Characterisitics 10 15 -10V VDS=-5V -4.5V -3V 12 8 6 -2.5V -ID(A) -ID (A) 9 4 6 125eC 25eC VGS=-2V 3 2 0 0 0 1 2 3 4 0 5 -VDS (Volts) Fig 1: On-Region Characteristics 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics  210 2 Normalized On-Resistance VGS=-2.5V 190 RDS(ON) (m: :) 170 150 VGS=-4.5V 130 110 90 VGS=-10V 70 50 VGS=-10V ID=-2.3A 1.8 1.6 1.4 VGS=-4.5V ID=-2A 2 1.2 VGS=-2.5V ID=-1A 1 0.8 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 250 ID=-2.3A 1.0E+01 1.0E+00 125eC 125eC -IS (A) RDS(ON) (m: :) 200 150 1.0E-01 25eC 1.0E-02 25eC 1.0E-03 100 1.0E-04 50 1.0E-05 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 6 2 www.kexin.com.cn 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 MOSFET SMD Type Complementary Trench MOSFET AO6601 (KO6601) Ƶ P-Channel Mosfet Typical Characterisitics 500 10 VDS=-15V ID=-2.3A 400 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 300 200 Coss 2 100 0 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 6 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25eC 10Ps 100Ps 1.0 1ms 10ms 0.1 100 Power (W) RDS(ON) limited 10 DC TJ(Max)=150eC TA=25eC 10s 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient 10 ZT JA Normalized Transient Thermal Resistance -ID (Amps) 10.0 D=Ton/T TJ,PK=TA+PDM.ZTJA.RTJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RTJA=150eC/W 0.1 0.01 PD Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.kexin.com.cn 7